72702. When a semi-conductor is doped, its electrical conductivity
72703. The conduction band is
72704. If an additional two diodes were used to connect the 1 kW load across a bridge rectifier circuits, utilizing the full secondary of the transformer, how much d.c. power could be delivered using a transformer with the rating of 105 VA?
72705. In an n channel JFET, VGS = VGS(off). Then
72706. In a bipolar transistor which current is smallest
72707. With increasing temperature, the electrical conductivity of metals
72708. The reverse saturation current in a semiconductor diode consists of
72709. The current gain of a transistor is the ratio of
72710. If a sample of Ge and a sample of Si have the same impurity density are kept at room temperature
72711. Varactor diode is forward biased when it is used.
72712. A good ohmic contact on a P-type semiconductor chip is formed by introducing
72713. The impurity added to extrinsic semiconductor is of the order of
72714. For a BJT, avalanche multiplication factor depends on
72715. The impurity commonly used for realizing the base region of a n-p-n transistor is
72716. Assertion (A): In CE connection of n-p-n transistor. VCE is positive. Reason (R): In BJT, the base collector junction is reverse biased.
72717. Assertion (A): Tunnel diode is used in many pulse and digital circuits. Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.
72718. In ferromagnetic materials
72719. Which one of the following circuits is most suitable as an oscillator at a frequency of 100Hz?
72720. The conductivity of an intrinsic semiconductor is
72721. Which of the following materials has the highest electrical conductivity?
72722. For masonry work with solid bricks consistency of mortar should be
72723. Hay bridge is suitable for measuring inductance of which one of the following inductors?
72724. When a substance is repelled by a magnetic field it is known as
72725. If μn is mobility of free electron and μp is mobility of holes then for silicon at 300 K
72726. In a specimen of n type semiconductor, the initial concentration of holes and electrons is pno and nno. When the specimen is subjected to radiation, the hole and electron concentration increase to pn and nn. Then
72727. Which of the following diode is designed to operate in the breakdown region?
72728. Fill in the suitable word in the blanks is the following questions. The electron in the outermost orbit is called __________ electron.
72729. A silicon diode is forward biased and total applied voltage is 5 V. The voltage across p-n junction is
72730. In a triode
72731. The output characteristics of a bipolar transistor has three distinct regions. They are known as
72732. Assertion (A): In a BJT, a dc is about 0.98. Reason (R): In a BJT, recombination in base region is high.
72733. Wienbridge oscillator uses
72734. Which of the following material is preferred for transformer cores operating in micro wave frequency range?
72735. The ac resistance of a forward biased p-n junction diode operating at a bias voltage V and carrying current 'I' is
72736. Photoelectric emitters in photo tubes are generally made of
72737. Assertion (A): Power transistors are more commonly of silicon npn type. Reason (R): The fabrication of silicon npn transistors is easy.
72738. In N-type semiconductor
72739. The addition of n type impurity to intrinsic material creates allowable energy levels.
72740. Which of the following elements act as donor impurities? GoldPhosphorusBoronAntimonyArsenicIndium Select the correct answer using the codes given below:
72741. The depletion layer in a reverse biased p-n junction is due to the presence of
72742. Which materials find application in MASER?
72743. An electrically neutral semiconductor has
72744. Magnetic recording tape is most commonly made from
72745. The circuit shown in the figure is best described as a
72746. Gold is often diffused into silicon P-N junction devices to
72747. In a solar cell, the photovoltaic voltages is the voltage at which the resultant current is
72748. The forbidden energy gap between the valence band and conduction band will be wide in case of
72749. At 0 K the forbidden energy gap in intrinsic semi conductor is about
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