72751. Before doping the semiconductor material is
72752. The atomic number of silicon is 14. It can be therefore concluded that
72753. X-rays cannot penetrate through a thick sheet of
72754. Ohmic range of metal film resistors is
72755. The current density J, free electron mobility μn, hole mobility μp , magnitude of free electron and hole concentration ni electric field E and charge on electron e, in intrinsic semiconductor are related as
72756. In order to achieve good stabilization in potential divider method current I1 through R1 and R2 should be
72757. A sample of N type semiconductor has electron density of 6.25 x 108/cm2 at 300 K. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature, the hole density works out to be
72758. Addition of 0.3 to 3.5% silicon to iron
72759. A bistable multivibrator
72760. Transconductance indicates the
72761. In n channel JFET, the gate voltage is made more negative
72763. The phenomenon known as "Early effect" in a BJT refers to a reduction of the effective base width caused by
72764. At absolute zero temperature a semiconductor behaves like
72765. In a 741 OP-amp, there is 20 dB/decade fall-off starting at a relatively low frequency. This is due to
72766. Which of the following material can be used in cable shields?
72767. The charge of an electron is
72768. The on voltage and forward breakover voltage of an SCR depend on
72769. EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that
72770. Assertion (A): The resistivity of intrinsic semiconductor decreases with increase in temperature. Reason (R): The forbidden gap decreases with increase in temperature.
72771. Typical value of reverse current in a semiconductor diode is
72772. Which of the following element has four valence electrons?
72773. In a transistor operating in forward active mode
72774. In standard TTL, the 'totem pole' stage refers to
72775. In p type semiconductor, the hole concentration
72776. If 100 V is the peak voltage across the secondary of the transformer in a half-wave rectifier (without any filter circuit), then the maximum voltage on the reverse-biased diode is
72777. The O/P Power of a power amplifier is several times its input power. It is possible because
72778. In p type semiconductor holes are majority carriers.
72779. Due to the formation of Schottky defects the density of the crystal
72780. The band gap of silicon at 300K is
72781. The current due to thermionic emission is given by Richardson Dushman equation.
72782. The thermionic emission current is given by
72783. In forward active region, the operation of a BJT
72784. The conductivity of a semiconductor crystal due to any current carrier is not proportional to
72785. A P-N junction diode dynamic conductance is directly proportional to
72786. The Ni-Zn ferrites are used for audio and TV transformers is that
72787. Hall's effect can be used to measure
72788. For insulators the energy gap is of the order of
72789. When electronic emission occurs due to bombardment of high velocity electrons on a metal surface, it is called secondary emission.
72790. The reverse saturation current depends on the reverse bias.
72791. One electron volt is equivalent to
72792. Resistivity of electrical conductors is most affected by
72793. Wiedemann-Franz law correlates
72794. Holes and electrons move in opposite directions.
72795. The energy of one quantum of light equal to hf.
72796. For most metals, Fermi level EF is less than
72797. The spins in a ferrimagnetic material are
72798. The permeability of soft iron can be increased by
72799. All of the following elements have three valence electrons EXCEPT
72800. What is the function of silicon dioxide layer in MOSFETS?
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