72552. The relation between plate current and plate voltage of a vacuum diode is called
72553. Given that the band gap of cadmium sulphide is 2.5 eV, the maximum photon wavelength, for e--hole pair generation will be
72554. The maximum rectification efficiency in case of full wave rectifier is
72555. For a full wave bridge rectifier supplied with 50 Hz a.c., the lowest ripple frequency will be
72556. When an electron rises through a potential of 100 V it will acquired an energy of
72557. Which one of the following gain equations is correct for a MOSFET common-source amplifier?(gm is mutual conductance, and RD is load resistance at the drain)
72558. If 1 kVA transformer is used for all of the following rectifiers, the d.c. power availability will be least in case of
72559. Which of the following is the ferric electric material?
72560. The amount of time between the creation and disappearance of a hole in an intrinsic semiconductor material is called
72561. In photo electric emission, the threshold frequency f0, work function Uw, and Planck's constant h are related as
72562. In which n type device does p substrate extend upto silicon dioxide layer?
72563. In a N-type semi-conductor, the concentration of minority carriers is mainly depends on
72564. The band gap of Si at room temperature is
72565. Spot the odd one out
72566. Transition capacitance is associated with __________ and depletion capacitance is associated with __________ diodes.
72567. Plywood is made by bonding together thin layers of wood in such a way that the angle between the grains of any layer to grains of adjacent layer is
72568. If the energy gap of a semiconductor is 1.1 eV, then it would be.
72569. The primary reason for the widespread use of Si in semiconductor device technology is
72570. If the conductivity of pure germanium is 1.54 siemens/metre, its resistivity in ohm-metre will be nearly
72571. Reluctivity is analogous to
72572. The v-i characteristics of a diode may be linear or non linear.
72573. If a coil has diameter 'd' number of turns 'N' and form factor F then the inductance of the coil is proportional to
72574. Under low level injection assumption, the infected minority carrier current for an extrinsic semiconductor is essentially the
72575. As the reverse voltage is increased, the depletion layer
72576. The cascade amplifier is a multistage configuration of
72577. The light output of LED varies as (current)n. The value of n is about
72578. If an electron move through a potential difference of 500 V, the energy possesses by it will be
72579. In which of the following does a negative resistance region exist in the v-i characteristics?
72580. The intrinsic resistivity of silicon at 300 K is about
72581. What happens when forward bias is applied to a junction diode?
72582. A differential amplifier is invariably used in the I/P stage of all OP-amps. This is done basically to produce the OP-amp with a very high.
72583. The addition of impurity in extrinsic semiconductor is about 1 part in 108 parts.
72584. Hall effect can be used
72585. The v-i characteristic of an element is shown in below figure the element is
72586. The probability giving distribution of electrons over a range of allowed energy levels is known as
72587. Hall coefficient is reciprocal of charge density.
72588. It is required to trace the output characteristics of a CE bipolar transistor on a CRO screen. The proper method is
72589. Atomic number of germanium is
72590. The resistivity of ferrites is
72591. For testing compressive and tensile strength of cement,the cement mortar made by mixing cement and standard sand in the proportion of
72592. In monostable multivibrator
72593. Assertion (A): Hall effect is used to find the type of semiconductor. Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions.
72594. When a p-n junction is forward biased. The width of depletion layer decreases.
72595. In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?
72596. The nominal size of modular brick with mortar joints is
72597. In a JFET, the drain current is maximum when
72598. A potential difference is developed across a current carrying metal strip when the strip is placed in a transverse magnetic field. The above effect is known as
72599. Force polygon representing a set of forces in equilibrium is a
72600. Which one of the following bipolar transistors has the highest current gain bandwidth Product (fr) for similar geometry?
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use
Powered By:Omega Web Solutions