72501. At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called
72502. The collector to emitter cutoff current (ICE0) of a transmitter is related to collector to base cut off current (ICB0) as
72503. Which of the following statement about the photo electric emission is incorrect?
72504. In a semiconductor avalanche breakdown occurs when
72505. No load d.c. output will be least in case of
72506. When an electron breaks a covalent bond and moves away,
72507. A photo diode is
72508. Germanium and Si phosphorus have their maximum spectral response in the
72509. In which condition does BJT behave like a closed switch?
72510. High purity copper is obtained by
72511. Photo electric emission can occur only if the frequency of light is more than threshold frequency.
72512. In a JFET the width of channel is controlled by
72513. The unit of thermal resistance of a semi-conductor device is
72514. In SI unit,unit of force and energy are respectively
72515. For generating 1 MHz frequency signal, the most suitable circuit is
72516. A doped semi-conductor is called
72517. In n type MOSFET, the substrate
72518. The first and the last critical frequency of an RC driving point impedance function must respectively by
72519. The diffusion current is proportional to
72520. In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is
72521. Which quantity controls the effectiveness of LED in emitting light?
72522. The current gain of a BJT is
72523. Ferromagnetic materials exhibit
72524. The saturation current in a semi-conductor diode
72525. When a ferromagnetic substance is magnetised, there are small changes in its dimensions. This phenomenon is called
72526. Gold is often diffused into silicon PN junction devices to
72527. In the figure shows the circuits symbol of
72528. Assertion (A): FET is a unipolar device. Reason (R): BJT is bipolar device.
72529. Ferrites are
72530. In a p-n-p transistor the main current carriers and the mechanism of flow respectively are
72531. The 6 V zener diode shown in figure has zero zener resistance and a knee current of 5 mA. The minimum value of R, so that the voltage across it does not fall below 6 V is
72532. Secondary emission occurs in
72533. In common base connection, the output characteristics of a bipolar junction transistor is drawn between
72534. In fabricating silicon BJT in ICs by the epitaxial process, the number of diffusions used is usually
72535. Consider the following statements about diamagnetic material and diamagnetism. The materials have negative magnetic susceptibility.At very low temperature diamagnetic materials. Which of the statements given above is/are correct?
72536. In a photo emissive device and emission efficiency is increased by
72537. Materials in order of decreasing electrical conductivity are
72538. Transconductance characteristics of JFET depict the relation between
72539. The resistivity of intrinsic semiconductor material is about
72540. Which of the following exhibits negative resistance in a portion of its characteristics?
72541. The emission of light is LED due to
72542. The sum of two or more arbitrary sinusoidal is
72543. Which of the following is used as a passive component in electronic circuits?
72544. Lowest resistivity of the following is
72545. Peak inverse voltage will be highest for
72546. In CE configuration, the output characteristics of a bipolar junction transistor is drawn between
72547. Assertion (A): The reverse current in a p-n junction is nearly constant. Reason (R): The reverse breakdown voltage of a p-n diode depends on the extent of doping.
72548. An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity Δσ obeys which relation? [ Here, e is the electron charge, μn electron mobility, μp hole mobility, Δn (Δp) is the excess electron (hole) density ].
72549. Resistivity of metals is expressed in terms of
72550. Figure shows characteristics curves for bipolar transistor. These curves are
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