67801. For transistor 2 N 338 the manufacturer specifies Pmax = 100 mW at 250°C free air temperature and maximum junction temperature of 125°C. Its thermal resistance is
67802. In figure base current is 10 μA and βdc = 100. Then VE =
67803. It has been found that in a rectifier circuit with RC filter one RC section reduces ripple by 15%. Two RC sections are used in cascade the reduction in ripple would be
67804. An op-amp has
67805. In the figure, assume the op-amp is to be ideal. The output Vo if the circuit is
67806. As the ratio Rf/RL increases the efficiency of a rectifier increases.
67807. Assuming VCE sat = 0.2 V and β = 50, the minimum base current (IB) required to drive the transistor in the given figure to saturation is
67808. A half wave diode rectifier uses a diode having forward resistance of 50 ohms. The load resistance is also 50 ohms. Then the voltage regulation is
67809. A Hartley oscillator is used for
67810. In Class C operation the collector current looks like
67811. An op-amp integrating circuit uses
67812. A CE amplifier has re = 6 Ω, β = 100 and a = 0.98. The input impedance is
67813. A full wave diode rectifier using centre tapped transformer has diodes with forward resistance of 50 ohms each. The load resistance of 50 ohms each. The load resistance is also 50 ohms. The voltage regulation is
67814. Leakage current approximately doubles for every 10°C increase in the temperature of a transistor has ICBO = 400 nA at 25°C, then its leakage current at 80°C
67815. A CB amplifier has IE = 3.5 mA, a = 0.98 and RL = 600 Ω. The input impedance
67816. An amplifier has open loop gain of 100, input impedance 1 kΩ and output impedance 100 Ω. If negative feedback with β = 0.99 is used, the new input and output impedances are
67817. In a BJT amplifier the power gain from base to collector is 4000. The power gain in dB is
67818. In figure, secondary winding has 40 turns. For maximum power transformer to 2 ohm resistance the number of turns in primary is
67819. In a CE amplifier circuit the dc voltage between emitter and ground
67820. A buffer amplifier should have
67821. If the differential voltage gain and the common mode voltage gain of a differential amplifier are 48 dB and 2 dB respectively, then its common mode rejection ratio is
67822. An npn transistor has a Beta cutoff frequency fβ of 1 MHz, and a common emitter short circuit low frequency current gain β0 of 200. It unity gain frequency fT and the alpha cut off frequency fa 2 respectively are
67823. In figure if the transistor is cut off, the collector voltage is equal to
67824. If input frequency is 50 Hz, the frequency of output wave in a full wave diode rectifier circuit is
67825. A class A transformer coupled power amplifier is to deliver 10 W output. The power rating of transistor should not be less than
67826. A CB amplifier has a = 0.98 and RL = 600 Ω. If IE = 3.5 mA, the current gain is
67827. funity of an op-amp is about 1 kHz.
67828. Assertion (A): In an RC coupled amplifier the junction capacitances can be neglected at low frequencies but not at high frequenciesReason (R): Capacitive reactance is inversely proportional to frequency.
67829. In figure, D1 turns on when
67830. In a full wave rectifier circuit using centre tapped transformer, the peak voltage across half of the secondary winding is 30 V. Then PIV is
67831. In the circuit of figure both diodes are ideal. If v1 = 10 V and v2 = 10 V which diode will conduct?
67832. The output impedance of an ideal op-amp is
67833. In the circuit of the given figure, assume that the diodes are ideal and the meter is an average indicating ammeter, the ammeter will read
67834. A virtual ground is a ground for
67835. As compared to a full wave diode rectifier circuit using centre tapped transformer, the bridge diode rectifier circuit has the main advantage of
67836. A dc power supply has no load voltage of 30 V and full load voltage of 25 V at full load current of 1 A. The output resistance and voltage regulation respectively are
67837. The main advantage of CC amplifier is
67838. If a = 0.995, IE = 10 mA, ICO = 0.5 mA, then ICEO will be
67839. Assertion (A): In class C amplifier the efficiency is more than that for other classes of amplifiersReason (R): In class C amplifier we can get high efficiency over a wideband
67840. In the following figure C = 0.02 μF, and Vth is known to be of frequency ω = 107 rad/sec and rd = 2.5 Ω and ZTh = RTh = 10 Ω Then phase angle between id and Vd
67841. A class C amplifier has input frequency of 200 kHz. If width of collector pulses is 0.1 μs, duty cycle is
67842. Output of a phase splitter is
67843. In a transistor the minimum and maximum values of βdc are 100 and 121. The proper value of βdc to be used to locate Q point is
67844. The input to an op-amp integrating amplifier is a constant voltage. The output will be
67845. FET amplifier is more difficult to analyse than BJT amplifier.
67846. To bypass a 100 ohm emitter resistor at
67847. In a CE amplifier the dc load line is the same as ac load line when
67848. If the output current wave shape of class C circuit has a period of 1 μs and a pulse width of 0.006 μs, the duty cycle is
67849. Which configuration is suitable for impedance matching?
67850. A BJT is said to be operating in saturation region if
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