67751. Calculate the conductivity of pure silicon at room temperature when the concentration of carriers is 1.6 x 1010 per cm3. Take μe = 1500 cm2/V-sec, μh = 500 cm2/V-sec at room temperature,
67752. A potential of 7 V is applied to a silicon diode. A resistance of 1 kΩ is also connected in series. If the diode is forward biased, the current in the circuit is
67753. Which of the following?
67754. In a transistor E mode the collector current with the transistor in cut off region is
67755. Two CE stages, 1 and 2 are coupled through a capacitor. VCC is the same for both. Base resistances RB1 and RB2 are such that RB1 > RB2. Then
67756. In a two stage CE amplifier circuit, the ac collector resistance of the first stage depends on
67757. In a CE amplifier the ac cut off voltage is 9 V and slope of ac load line is - 0.5 mA/V. The ac saturation current is
67758. For dc the current through coupling capacitor in CE amplifier circuit is
67759. In a CE amplifier the collector resistance is short circuited. The ac output voltage will
67760. In a transistor CE mode, VCC = +30 V. If the transistor is in cut off region, VCE =
67761. The dc load current in a bridge rectifier circuit is 10 mA. The dc load current through each diode is
67762. An integrating amplifier has resistance in feedback path.
67763. The units of transistor h parameters h11 and h22 are the same.
67764. Positive feedback is mainly used in
67765. For a BJT if β = 50, ICEO = 3 μA and IC = 1.2 mA then IB
67766. In figure, ID = 4 mA. Then VD =
67767. The main application of enhancement mode MOSFET is in
67768. A circuit using an op-amp is shown in the given figure. It has
67769. Assertion (A): In CE amplifier the emitter is at ground potential for ac signalsReason (R): A CE amplifier has near unity voltage gain
67770. An oscillator requires an amplifier
67771. A full wave bridge diode rectifier uses diodes having forward resistance of 50 ohms each. The load resistance is also 50 ohms. The voltage regulations is
67772. The disadvantage of direct coupled amplifiers is
67773. A transistor has a power rating of 8 W for a case temperature of 25°C. If derating factor is 30 mW/°C, the power rating for 55°C, case temperature is
67774. In figure VBE = 0.7 V. The base current is
67775. An ideal power supply has
67776. In a self bias circuit for CE amplifier, the emitter resistance is made three times the original value. The collector current will
67777. A P-channel MOSFET operating in the enhancement mode is characterized by Vt = - 4 V and IDQ = - 10 mA, when VGSQ = - 5.5 V, what will be VGSQ if IDQ = -15 mA and ID, on = - 16 mA
67778. If the Q of a single stage single tuned amplifier is doubled, the bandwidth will
67779. In full wave rectification, if the input frequency is 50 Hz, then frequency at the output of filter is
67780. The circuit in the given figure is
67781. The turn ratio of a transformer is 20:1, if a load of 10Ω is connected across the secondary, what will be the effective resistance seen looking into the Primary?
67782. In a CE amplifier circuit the ac voltage between emitter and ground
67783. A 120 V, 30 Hz source feeds a half wave rectifier circuit through a 4 : 1 step down transformer, the average output voltage is
67784. The slew rate of an ideal op-amp is
67785. Regulation of the DC power supply of 12 V, 100 mA is the effective resistance of power supply is 20 Ω
67786. In the circuit of figure v1 = 8 V and v2 = 0. Which diode will conduct (Assume ideal diodes)?
67787. Assertion (A): An op-amp has high voltage gain, high input impedance and low output impedanceReason (R): Negative feedback increases output impedance
67788. A transistor has a maximum power dissipation of 350 mW at an ambient temperature of 25°C. If derating factor is 2 mW/°C, the maximum power dissipation for 40°C ambient temperature is
67789. The output voltage waveform of a CE amplifier is fed to a dc coupled CRO. The trace on the screen will be
67790. In an RC phase shift oscillator, the total phase shift of the three RC lead networks is
67791. In the circuit of figure β = 100 and quiescent value of base current is 20 μA. The quiescent value of collector current is
67792. Values of VT at 20°C for an ideal P-N diode
67793. Assertion (A): In an op-amp the voltage gain and band width can be adjusted as per requirementReason (R): Large value capacitor can also be fabricated on a chip
67794. In figure which diode will conduct and what will be the value of V0?
67795. For the amplifier circuit of figure, the h parameters of transistor are hib = 25 Ω, hfb = 0.999, hob = 10-6 Ω. The voltage gain is
67796. In figure, VCC = + 30 V, R1 = 200 kΩ and R2 = 100 kΩ. If VBE = 0.7 V, the voltage a cross RE =
67797. A negative feedback can be of
67798. In a class C power amplifier the input frequency of ac signal is 1 MHz. If tank circuit has C = 1000 pF, the value of L =
67799. The Vo of the op-amp circuit shown in the given is
67800. In calculating output impedance of an amplifier the source is replaced by an open circuit.
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