64651. The value of gm is at its maximum gm0 at VGS equal to ________ and zero at VGS equal to ________.
64652. A ________ configuration has a voltage gain less than 1.
64653. ________ is a required step in order to calculate Zo.
64654. The input and output signals are 180º out of phase in a ________ configuration.
64655. In a class D amplifier, the output transistors are operated in a nonlinear mode.
64656. Generally, higher voltage gains can be achieved with bipolar amplifiers than with FET amplifiers.
64657. Bypassing a source resistor reduces the voltage gain.
64658. Class D amplifier efficiencies can reach practical levels of more than 90%.
64659. There is no phase inversion between the gate and the drain voltages.
64660. The common-drain amplifier is also called a source-follower.
64661. A load resistance connected to the output of an amplifier reduces the voltage gain.
64662. In a class D amplifier, the low-pass filter comes directly after the pulse-width modulator.
64663. The common-drain configuration has extremely high input resistance.
64664. The voltage gain of a common-source amplifier is found by the product of gm and Rd.
64665. The common-gate configuration has extremely high input resistance.
64666. Digital MOSFET switches are used in the sample-and-hold circuit of an analog-to-digital converter.
64667. In an analog MOSFET switch, the input is applied to the gate and the output is taken from the source.
64668. The common-source configuration has extremely high input resistance.
64669. There is a 180º phase inversion between the gate and source voltages.
64670. A common-gate amplifier is similar in configuration to which BJT amplifier?
64671. The theoretical efficiency of a class D amplifier is
64672. A common-source amplifier is similar in configuration to which BJT amplifier?
64673. Refer to this figure. If R6 opened, the signal at the drain of Q1 would
64674. Refer to this figure. Find the value of VD.
64675. Refer to this portion of a specification sheet. Determine the values of reverse-gate-source voltage and gate current if the FET was forced to accept it.
64676. At which of the following condition(s) is the depletion region uniform?
64677. What is the ratio of ID / IDSS for VGS = 0.5 VP?
64678. Referring to this transfer curve, determine ID at VGS = 2 V.
64679. Which of the following controls the level of ID?
64680. It is the insulating layer of ________ in the MOSFET construction that accounts for the very desirable high input impedance of the device.
64681. The BJT is a ________ device. The FET is a ________ device.
64682. Referring to this transfer curve. Calculate (using Shockley's equation) VGS at ID = 4mA.
64683. The drain current will always be one-fourth of IDSS as long as the gate-to-source voltage is ________ the pinch-off value.
64684. The transfer curve is not defined by Shockley's equation for the ________.
64685. What is the purpose of adding two Zener diodes to the MOSFET in this figure?
64686. Referring to the following transfer curve, determine the level of VGS when the drain current is 20 mA.
64687. The region to the left of the pinch-off locus is referred to as the ________ region.
64688. Refer to the following curves. Calculate ID at VGS = 1 V.
64689. Which of the following transistor(s) has (have) depletion and enhancement types?
64690. The three terminals of the JFET are the ________, ________, and ________.
64691. Which of the following is (are) the terminal(s) of a field-effect transistor (FET).
64692. A BJT is a ________-controlled device. The JFET is a ________ - controlled device.
64693. How many terminals can a MOSFET have?
64694. Refer to the following figure. Calculate VGS at ID = 8 mA for k = 0.278 × 10–2 A/V2.
64695. The level of VGS that results in ID = 0 mA is defined by VGS = ________.
64696. Which of the following FETs has the lowest input impedance?
64697. Which of the following applies to MOSFETs?
64698. At which of the following is the level of VDS equal to the pinch-off voltage?
64699. Which of the following represent(s) the cutoff region for an FET?
64700. Which of the following is (are) the advantage(s) of VMOS over MOSFETs?
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