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You Are On Multi Choice Question Bank SET 1292
64601. For the fixed-bias configuration, if ________.
(A): RD (B): RG
64602. Referring to this figure, obtain gm for ID = 6 mA.
(A): 2.83 mS (B): 3.00 mS (C): 3.25 mS (D): 3.46 mS
64603. Referring to this figure, calculate Zo for VGSQ = –3.2 V.
(A): 362.52 (B): 340.5 (C): 420.5 (D): 480.9
64604. The more horizontal the characteristic curves on the drain characteristics, the ________ the output impedance.
(A): less (B): same (C): greater
64605. Refer to this figure. If gm = 4000 mS and a signal of 75 mV rms is applied to the gate, calculate the p-p output voltage.
(A): 990 mV (B): 1.13 V p-p (C): 2.8 V p-p (D): 990 V p-p
64606. Refer to this figure. The approximate value of Rin is
(A): 100 M. (B): 1.5 k. (C): 3.3 k. (D): 48 M.
64607. Which of the following is (are) related to depletion-type MOSFETs?
(A): can be negative, zero, or positive. (B): gm can be greater or smaller than gm0. (C): ID can be larger than IDSS. (D): All of the above
64608. Refer to this figure. If C2 shorted, Vout would
(A): increase. (B): decrease. (C): remain the same. (D): distort.
64609. The input resistance at the gate of a FET is extremely
(A): high. (B): low.
64610. Determine the value for RD if the ac gain is 8.
(A): 1.51 k (B): 1.65 k (C): 1.85 k (D): 2.08 k
64611. Referring to this figure, calculate Zi for yos = 20 S. Assume VGSQ = −2.2V.
(A): 300.2 (B): 330.4 (C): 340.5 (D): 350.0
64612. FET amplifiers provide ________.
(A): excellent voltage gain (B): high input impedance (C): low power consumption (D): All of the above
64613. CMOS digital switches use
(A): n-channel and p-channel D-MOSFETs in series. (B): n-channel and p-channel D-MOSFETs in parallel. (C): n-channel and p-channel E-MOSFETs in series. (D): n-channel and p-channel E-MOSFETs in parallel.
64614. What is the range of gm for JFETs?
(A): 1 S to 10 S (B): 100 S to 1000 S (C): 1000 S to 5000 S (D): 10000 S to 100000 S
64615. Calculate gm and rd if yfs = 4 mS and yos = 15S.
(A): 4 mS, 66.7 k (B): 4 mS, 15 k (C): 66.7 k, 4 mS (D): None of the above
64616. What limits the signal amplitude in an analog MOSFET switch?
(A): the switch input capacitance (B): VGS(th) (C): VDS
64617. Input resistance of a common-drain amplifier is
(A): RG || RIN(gate). (B): RG + RIN(gate). (C): RG. (D): RIN(gate).
64618. Refer to this Figure. If Vin was increased in amplitude a little, the signal voltage at the source of Q2 would
(A): increase. (B): decrease. (C): remain the same. (D): distort.
64619. Refer to this figure. If VGS = –6 V, calculate the value of RS that will provide this value.
(A): 2.2 k (B): 1.2 k (C): 600 k (D): 100 k
64620. A JFET cascade amplifier employs
(A): 2 common-gate amplifiers. (B): 2 common-source amplifiers. (C): 1 common-gate and 1 common-source amplifier. (D): 1 common-gate and 1 common-drain amplifier.
64621. E-MOSFETs are generally used in switching applications because
(A): of their very low input capacitance. (B): of their threshold characteristic (VGS(th)). (C): of their high-frequency response capabilities. (D): of their power handling.
64622. For an FET small-signal amplifier, one could go about troubleshooting a circuit by ________.
(A): viewing the circuit board for poor solder joints (B): using a dc meter (C): applying a test ac signal (D): All of the above
64623. The E-MOSFET is quite popular in ________ applications.
(A): digital circuitry (B): high-frequency (C): buffering (D): All of the above
64624. Referring to this figure, calculate Av if yos = 20 S.
(A): –3.48 (B): –3.56 (C): –3.62 (D): –4.02
64625. Referring to this figure, calculate Zo if yos = 40 S.
(A): 2.92 k (B): 3.20 k (C): 3.25 k (D): 3.75 k
64626. In a common-source amplifier, the purpose of the bypass capacitor, C2, is to
(A): keep the source effectively at ac ground. (B): provide a dc path to ground. (C): provide coupling to the input. (D): provide coupling to the load.
64627. Refer to this figure. The voltage gain is
(A): 1.2. (B): 2.4. (C): 4.4. (D): 8.8.
64628. Refer to this figure. If ID = 4 mA, IDSS = 16 mA, and VGS(off) = –8 V, find VDS.
(A): 19.2 V (B): –6 V (C): 10.8 V (D): 30 V
64629. If ID = IDSS / 2, gm = ________ gmo.
(A): 1 (B): 0.707 (C): 0.5
64630. The gate-to-source voltage VGS of a(n) ________ must be larger than the threshold VGS(Th) for the transistor to conduct.
(A): JFET (B): D-type MOSFET (C): E-type MOSFET (D): None of the above
64631. ________ is the network-input impedance for a JFET fixed-bias configuration.
(A): RG (B): RD (C): Zero (D): None of the above
64632. The isolation between input and output circuits in the ac equivalent circuit is lost in a ________ configuration.
(A): common-gate (B): common-source (C): common-drain (D): None of the above
64633. ________ is the amplification factor in FET transistor amplifiers.
(A): Zi (B): gm (C): ID (D): IG
64634. The ________ does not support Shockley's equation.
(A): JFET (B): D-type MOSFET (C): E-type MOSFET (D): None of the above
64635. The transconductance gm ________ as the Q-point moves from Vp to IDSS
(A): decreases (B): remains the same (C): increases (D): None of the above
64636. rd changes from one operation region to another with ________ values typically occurring at ________ levels of VGS (closer to zero).
(A): lower, lower (B): lower, higher (C): higher, lower (D): None of the above
64637. The ________ is quite popular in digital circuits, especially in CMOS circuits that require very low power consumption.
(A): JFET (B): BJT (C): D-type MOSFET (D): E-type MOSFET
64638. ________ configuration(s) has (have) Zo RD.
(A): Fixed-bias (B): Self-bias (C): Voltage-divider (D): All of the above
64639. The input and output signals are in phase in a ________ configuration.
(A): fixed-bias (B): source-follower (C): voltage-divider (D): self-bias
64640. gm has its maximum value for a JFET at ________.
(A): 0.5 (B): 0.3 (C): IDSS
64641. The depletion MOSFET circuit has a ________ input impedance than a similar JFET configuration.
(A): much higher (B): much lower (C): lower (D): higher
64642. ________ is the only parameter that is different between voltage-divider and fixed-bias configurations.
(A): Zi (B): Av (C): Zo (D): None of the above
64643. The ________ controls the ________ of an FET.
(A): ID, VGS (B): VGS, ID (C): IG, VDS (D): IG, ID
64644. Transconductance is the ratio of changes in ________.
(A): ID to VGS (B): ID to VDS (C): VGS to IG (D): VGS to VDS
64645. The ________ configuration has an input impedance, which is other than RG.
(A): common-source (B): common-gate (C): common-drain (D): None of the above
64646. The range of output admittance yos for FETs is ________.
(A): 5 S–10 S (B): 10 S –50 S (C): 50 S –100 S (D): 200 S –500 S
64647. The ________ configuration has the distinct disadvantage of requiring two dc voltage sources.
(A): self-bias (B): voltage-divider (C): fixed-bias (D): All of the above
64648. A field-effect transistor amplifier provides excellent voltage gain with the added feature of a ________ input impedance.
(A): low (B): medium (C): high (D): None of the above
64649. ________ is an undefined quantity in a JFET.
(A): Ai (B): Av (C): Zi (D): Zo
64650. The range of input impedance Zi for MOSFETs is ________.
(A): 1 k–10 k (B): 100 k–1 M (C): 10 M–100 M (D): 1012 to 1015
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