1. A germanium diode has a reverse saturation current of 30 μA at 125°C and forward current of 1 mA at a forward potential of 0.8 V and the reverse potential is 0.6 V What are its dynamic forward and reverse resistance at this temperature.





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MCQ->Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.

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