Toggle navigation
Home
Article Category
Question Papers
General Knowlege
Popular Pages
Multiple Choice Question in 049
Multiple Choice Question in
Multiple Choice Question in 2016
Multiple Choice Question in -current-affairs-2016
Multiple Choice Question in TRADES-INSTRUCTOR---GR-II---SMITHY---TECHNICAL-EDUCATION
Question Answer in ASSISTANT-PROFESSOR---COMPUTER-SCIENCE-AND-ENGINEERING---TECHNICAL-EDUCATION
Multiple Choice Question in ASSISTANT-PROFESSOR---COMPUTER-SCIENCE-AND-ENGINEERING---TECHNICAL-EDUCATION
Multiple Choice Question in english
Multiple Choice Question in abbreviations-abbreviations-m
Multiple Choice Question in SSC CHSL 7 March 2018 Morning Shift
Multiple Choice Question in 072/2016
Question Answer Bank
Multiple Choice Question Bank
Question Answer Category
Multiple Choice Question Category
Home
->
Multiple Choice Questions
1. A reverse voltage of 18 V is applied to a semiconductor diode. The voltage across the depletion layer is
(A): 0 V
(B): 0.7 V
(C): about 10 V
(D): 18 V
Previous Question
Show Answer
Next Question
Add Tags
Report Error
Show Marks
Write Comment
Type in
(Press Ctrl+g to toggle between English and the chosen language)
Post reply
Comments
Tags
Show Similar Question And Answers
QA->The voltage regulator in the combined voltage and current regulator of a d.c charging circuit contains....
QA->The compound causes ozone depletion is?....
QA->The viceroy of reverse character....
QA->RBI Changes reverse repo rate by....
QA->The topmost layer in the ISO model that needs to be implemented in an intermediate node is the -----------layer.....
MCQ->A reverse voltage of 18 V is applied to a semiconductor diode. The voltage across the depletion layer is....
MCQ->Which of the following characteristics of a silicon p-n junction diode make it suitable for use as ideal diode? It has low saturation current.It has high value of cut in voltage.It can withstand large reverse voltage.When compared with germanium diode, silicon diode shows a lower degree of temperature dependence under reverse conditions. Select the answer using the given below....
MCQ->Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C. Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature. ....
MCQ->Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value. Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current. ....
MCQ->A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is....
×
×
Type The Issue
×
Your Marks
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use
Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...
Privacy
|
Terms And Conditions