Toggle navigation
Home
Article Category
Question Papers
General Knowlege
Popular Pages
Multiple Choice Question in
Multiple Choice Question in 049
Multiple Choice Question in 2016
Multiple Choice Question in -current-affairs-2016
Multiple Choice Question in TRADES-INSTRUCTOR---GR-II---SMITHY---TECHNICAL-EDUCATION
Question Answer in ASSISTANT-PROFESSOR---COMPUTER-SCIENCE-AND-ENGINEERING---TECHNICAL-EDUCATION
Multiple Choice Question in ASSISTANT-PROFESSOR---COMPUTER-SCIENCE-AND-ENGINEERING---TECHNICAL-EDUCATION
Multiple Choice Question in english
Multiple Choice Question in abbreviations-abbreviations-m
Multiple Choice Question in SSC CHSL 7 March 2018 Morning Shift
Multiple Choice Question in 072/2016
Question Answer Bank
Multiple Choice Question Bank
Question Answer Category
Multiple Choice Question Category
Home
->
Multiple Choice Questions
1. The emitter of a transistor is generally doped the heaviest because it:
(A): Has to dissipate maximum power
(B): Has to supply the majority charge carriers to the base
(C): Is the first region of the transistor
(D): Must possess low resistance
Previous Question
Show Answer
Next Question
Add Tags
Report Error
Show Marks
Write Comment
Type in
(Press Ctrl+g to toggle between English and the chosen language)
Post reply
Comments
Tags
Show Similar Question And Answers
QA->Which sector is the largest emitter of greenhouse gases in India?....
QA->Which sector is the largest emitter of greenhouse gases in India ?....
QA->Who discovered Transistor ?....
QA->Who is the inventor of Transistor?....
QA->Transistor was invented by ?....
MCQ->The emitter of a transistor is generally doped the heaviest because it:....
MCQ->A uniformly doped silicon epitaxial NPN bipolar transistor is fabricated with a base doping of Nb = 3 x 1016 cm”3and a heavily doped collector region with Nc = 5 x 1017 cm-3. The neutral base width is xB = 0.7 um when = VM = 0. The VBC at punch-through is (in V):....
MCQ->Match the following: List I List II A.Total instantaneous value of emitter current1.IEB.Quiescent value of emitter current2.iEC.Instantaneous value of as component of emitter current3.IeD.RMS value of ac component of emitter current4.ie ....
MCQ->In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector dopings in atoms/cm3, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?....
MCQ->A silicon sample A is doped with 1018 Atoms/cm3 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is....
×
×
Type The Issue
×
Your Marks
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use
Powered By:Omega Web Solutions
© 2002-2017 Omega Education PVT LTD...
Privacy
|
Terms And Conditions