1. Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use