1. Assertion (A): A decrease in temperature increases the reverse saturation current in a p-n diode. Reason (R): When a diode is reverse biased surface leakage current flows.





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MCQ->Assertion (A): A decrease in temperature increases the reverse saturation current in a p-n diode. Reason (R): When a diode is reverse biased surface leakage current flows.

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MCQ->Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value. Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.

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MCQ->Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C. Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

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MCQ->Assertion (A): The capacitance of a reverse biased pin diode is lower than that of reverse biased p-n diode. Reason (R): A PIN diode has an intrinsic layer between p and n regions.

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MCQ->Assertion (A): A high junction temperature may destroy a diode. Reason (R): As temperature increases the reverse saturation current increases.

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