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You Are On Multi Choice Question Bank SET 1364

68201. For an amplifier the input output signals are shown in figure. The class of amplifier is





68202. In a N-P-N transistor the function of the emitter is





68203. The noise figure is





68204. A Darlington pair is used for





68205. In a shunt-shunt negative feedback amplifier, as compared to the basic amplifier





68206. In rectifiers the use of RC filters is recommended when





68207. The coupling capacitor mainly affects





68208. A CE amplifier is the most common BJT amplifier.



68209. The main drawback in the performance of shunt peaked wide band amplifier is





68210. A generator with an internal resistance of 600 Ω drives an amplifier whose input resistance is 400 Ω. The generator's open circuit voltages is 1 mV; the amplifier develops 100mV across an 8kΩ load. The current amplification is





68211. In a CE amplifier circuit





68212. In a push pull circuit the two transistors are





68213. The oscillator shown in figure is a




68214. In which configuration does output ac voltage appear between emitter and ground?





68215. Figure represents a





68216. At high frequencies the output circuit of transistor amplifier reduces to





68217. A pulse transformer uses





68218. A transistor in CE mode is in saturation region. Then the collector is almost at





68219. The semi-conductor type 2 N 34 indicates





68220. The emitter bias largely depends on





68221. A limiter circuit can be built using a diode and resistance.



68222. In saturation region JFET acts like a





68223. Which of the following are difficult to be fabricated in a monolithic IC?





68224. In an op-amp a common mode signal is applied to





68225. The ripple factor of a full wave rectifier is about 0.5.



68226. Which of the following op-amp circuits has zero resistance in the feedback path?





68227. In an LC filter, the ripple factor,





68228. FET can used in





68229. The Malayalam literateur who received the Jnanapith Award in 2007?





68230. Each of two cascaded stages has a voltage gain of 30. The overall gain is





68231. A two stage amplifier has an upper cutoff frequency of 2 MHz and a lower cutoff frequency of 2 MHz and a lower cut off frequency of 30 Hz. If both stages are similar, their individual upper and lower cut off frequencies respectively are





68232. A bipolar transistor is a __________ controlled devices whereas a FET is a __________ controlled devices.





68233. The input impedance of a non-inverting amplifier is very low.



68234. RC oscillator can be used upto





68235. In a N-P-N transistor of the emitter junction is reverse biased and collector junction is also reversed biased, the transistor will operate in





68236. Wide banding technique is employed in the





68237. Assertion (A): The maximum efficiency of a class B push pull amplifier is 78.5%Reason (R): A current mirror uses a compensating diode in parallel with the emitter diode





68238. In a common Emitter BJT amplifier, the maximum usable supply voltage is limited by





68239. High frequency oscillations can be caused by





68240. In order to obtain triangular pulses at the output of the circuit in the figure, the input should be.





68241. In which of the following cities was the Indian Biodiversity Congress(2010)held?





68242. A feedback network to be used with an amplifier to provide oscillation is tested and found to give an output of 0.124 V with a 0.5 V input. What will be the effect on output if the amplifier's gain is twice that required by the Barkhausen criterion?





68243. -------------sector has established itself as the biggest contributor to the State’s GDP as per Kerala State’s Economic Review(February 2011)





68244. In a combination limiter with sinusoidal input voltage the output wave can be nearly square.



68245. Assertion (A): A Darlington amplifier has very low output impedanceReason (R): The circuit has a low resistance RE between emitter and ground





68246. Name the most significant characteristic of National Integration:





68247. A silicon PN junction diode under reverse bias has depletion region of width 10 μm. The relative permittivity of silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 x 10-12 F/m. The depletion capacitance of the diode per square meter is





68248. The properties of FETs resemble closely to





68249. The source of the harmonic distortion in a RC coupled transistor amplifier is usually





68250. Two transistors have same value of a but different gain (G) bandwidth (B) product. The transistors have similar geometry. However one of them is germanium and the other is silicon. The transistor with lower GB product





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