Go To Top Reset
<<= Back
Next =>>
You Are On Multi Choice Question Bank SET 1342
67101. The process of entering data into the ROM is called ___________.
(A): burning in (B): configuration (C): internal decoding (D): addressing
67102. To reduce the number of pins on the IC package, manufacturers often use ___________.
(A): MOSFET architecture (B): address multiplexing (C): address decoding (D): address demultiplexing
67103. The periodic recharging of DRAM memory cells is called ___________.
(A): multiplexing (B): bootstrapping (C): refreshing (D): flashing
67104. ________ is an example of read/write memory.
(A): PROM (B): EEPROM (C): RAM (D): MROM
67105. A computerized self-diagnostic for a ROM test uses:
(A): the check-sum method (B): a ROM listing (C): ROM comparisons (D): a checkerboard test
67106. How many storage locations are available when a memory device has twelve address lines?
(A): 144 (B): 512 (C): 2048 (D): 4096
67107. Which of the following memories uses a MOSFET and a capacitor as its memory cell?
(A): SRAM (B): DRAM (C): ROM (D): DROM
67108. Which of the following best describes nonvolatile memory?
(A): memory that retains stored information when electrical power is removed (B): memory that loses stored information when electrical power is removed (C): magnetic memory (D): nonmagnetic memory
67109. The access time (tacc) of a memory IC is governed by the IC's:
(A): internal address buffer (B): internal address decoder (C): volatility (D): internal address decoder and volatility
67110. Silicon atoms combine into an orderly pattern called a:
(A): covalent bond (B): crystal (C): semiconductor (D): valence orbit
67111. In "n" type material, majority carriers would be:
(A): holes (B): dopants (C): slower (D): electrons
67112. Elements with 1, 2, or 3 valence electrons usually make excellent:
(A): conductors (B): semiconductors (C): insulators (D): neutral
67113. A commonly used pentavalent material is:
(A): arsenic (B): boron (C): gallium (D): neon
67114. Which material may also be considered a semiconductor element?
(A): carbon (B): ceramic (C): mica (D): argon
67115. In "p" type material, minority carriers would be:
(A): holes (B): dopants (C): slower (D): electrons
67116. What can a semiconductor sense?
(A): magnetism (B): temperature (C): pressure (D): all of the above
67117. When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called?
(A): energy gap (B): hole (C): electron-hole pair (D): recombination
67118. Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?
(A): 0.2 (B): 0.3 (C): 0.7 (D): 0.8
67119. Which semiconductor material is made from coal ash?
(A): germanium (B): silicon (C): tin (D): carbon
67120. When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:
(A): 1949, William Schockley (B): 1955, Walter Bratten (C): 1959, Robert Noyce (D): 1960, John Bardeen
67121. When is a P-N junction formed?
(A): in a depletion region (B): in a large reverse biased region (C): the point at which two opposite doped materials come together (D): whenever there is a forward voltage drop
67122. A P-N junction mimics a closed switch when it:
(A): has a low junction resistance (B): is reverse biased (C): cannot overcome its barrier voltage (D): has a wide depletion region
67123. Solid state devices were first manufactured during:
(A): World War 2 (B): 1904 (C): 1907 (D): 1960
67124. Electron pair bonding occurs when atoms:
(A): lack electrons (B): share holes (C): lack holes (D): share electrons
67125. How many valence electrons are in every semiconductor material?
(A): 1 (B): 2 (C): 3 (D): 4
67126. What is a type of doping material?
(A): extrinsic semiconductor material (B): pentavalent material (C): n-type semiconductor (D): majority carriers
67127. Minority carriers are many times activated by:
(A): heat (B): pressure (C): dopants (D): forward bias
67128. What is the voltage across R1 if the P-N junction is made of silicon?
(A): 12 V (B): 11.7 V (C): 11.3 V (D): 0 V
67129. If conductance increases as temperature increases, this is known as a:
(A): positive coefficient (B): negative current flow (C): negative coefficient (D): positive resistance
67130. Which of the following cannot actually move?
(A): majority carriers (B): ions (C): holes (D): free electrons
67131. What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?
(A): conductivity (B): resistance (C): power (D): all of the above
67132. The forward voltage drop for a germanium transistor is 0.7 V and for a silicon transistor is 0.3 V.
(A): True (B): False
67133. When a depletion region of a transistor is large the barrier voltage is also large.
(A): True (B): False
67134. The first integrated circuit was invented in 1959.
(A): True (B): False
67135. A covalent bond is when atoms lose valence shell electrons.
(A): True (B): False
67136. When a voltage is placed across a semiconductor, free electrons move toward the negative voltage.
(A): True (B): False
67137. The first transistor was invented in 1938.
(A): True (B): False
67138. Germanium is the most widely used semiconductor material because of its stability at high temperatures.
(A): True (B): False
67139. The natural elements carbon, germanium, and silicon are semiconductors.
(A): True (B): False
67140. The P-N junction is a barrier to electron flow.
(A): True (B): False
67141. The number of electrons in the outer shell of carbon, germanium, and silicon is 5.
(A): True (B): False
67142. The n-type semiconductor material is doped by adding material with electron holes.
(A): True (B): False
67143. Reverse bias is a condition that essentially ___________ current through the diode.
(A): allows (B): prevents (C): increases (D): blocks
67144. Atoms that normally have three electrons in their outer shell are called __________________ atoms.
(A): trivalent (B): pentavalent (C): tetravalent (D): charged
67145. Intrinsic semiconductor material is characterized by a valence shell of how many electrons?
(A): 1 (B): 2 (C): 4 (D): 6
67146. Ionization within a P-N junction causes a layer on each side of the barrier called the:
(A): junction (B): depletion region (C): barrier voltage (D): forward voltage
67147. What is the most significant development in electronics since World War II?
(A): the development of color TV (B): the development of the diode (C): the development of the transistor (D): the development of the TRIAC
67148. What causes the depletion region?
(A): doping (B): diffusion (C): barrier potential (D): ions
67149. What is an energy gap?
(A): the space between two orbital shells (B): the energy equal to the energy acquired by an electron passing a 1 V electric field (C): the energy band in which electrons can move freely (D): an energy level at which an electron can exist
67150. Spot the wrong pair
(A): Agni V-missile (B): kalpana-1-Weather Satellite (C): Bhuvan-Inhouse Mapping system (D): T-90-Satellite launch Vehicle
<<= Back
Next =>>
Terms And Service:We do not guarantee the accuracy of available data ..We Provide Information On Public Data.. Please consult an expert before using this data for commercial or personal use
Powered By:Omega Web Solutions © 2002-2017 Omega Education PVT LTD...Privacy | Terms And Conditions