73001. In case of photo conductor for germanium when forbidden energy gap is 0.72 eV, the critical wavelength for intrinsic excitation will be
73002. In the sale of diamonds the unit of weight is carat. One carat is equal to
73003. R.M.S. value of the waveform shown will be
73004. The effect of current shunt feedback in an amplifier is to
73005. Assertion (A): A JFET can be used as a current source. Reason (R): In beyond pinch off region the current in JFET is nearly constant.
73006. Permalloy is
73007. Which of the following could be the maximum current rating of junction diode by 126?
73008. Each cell of a static Random Access memory contains
73009. An electron in the conduction band
73010. The magnetization 'm' of a superconductor in a field of H is
73011. The number of free electrons in acceptor atom is
73012. Maximum rectification efficiency for a half wave rectifier is
73013. For a semiconductor, the conductivity is a function of the products of the number of charge carriers and their mobilites. As result, if the temperature of a slab of intrinsic silicon increases, how does its conductivity vary?
73014. In a junction transistor, the collector cut-off current 'ICB0' reduces considerably by doping the
73015. A Schottky diode clamp is used along with a switching BJT for
73016. The first dominant pole encountered in the frequency response of a compensated op-amp is approximately at
73017. The kinetic energy of free electrons in a metal is (where k is de-Broglie wave number of the electrons)
73018. Intrinsic concentration of charge carriers in a semiconductor varies as
73019. The dynamic resistance of a forward biased p-n diode
73020. A thermistor is a
73021. When diodes are connected in series to increase voltage rating the peak inverse voltage per junction
73022. Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is
73023. In an ideal diode there is no breakdown, no __________ current, and no forward __________ drop.
73024. Silicon is not suitable for fabrication of light emitting diodes because it is
73025. MOSFET can be used as a
73026. Power diodes are generally
73027. The inductance of a single layer solenoid of 10 turns is 5 μH. Which one of the following is the correct value of inductance when the number of turns is 20 and the length is doubled.
73028. The depletion layer width of Junction
73029. Forbidden energy gap in germanium at 0 K is about
73030. Light dependent resistors are
73031. Fermi level is the amount of energy in which
73032. When avalanche breakdown occurs covalent bonds are not affected.
73033. In p channel JFET, VGS is positive.
73034. Human body cannot sustain electric current beyond
73035. To produce p type semiconductor we add
73036. The term efficacy, is defined by
73037. The addition of p type impurity to intrinsic material creates allowable energy levels.
73038. An ideal Op-amp is an ideal
73039. Free electrons exist in
73040. Resistivity of copper is nearly
73041. As compared to bipolar junction transistor, a FET
73042. For a P-N diode, the number of minority carriers crossing the junction depends on
73043. Which of the following methods of applying water may be used in rolling land?
73044. At room temperature the current in an intrinsic semiconductor is due to
73045. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
73046. The most commonly used semiconductor material is
73047. In which of these is reverse recovery time nearly zero?
73048. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
73049. Following staff readings were taken with a level,the instrument having been moved after third and sixth reading 2,200,1,620,980,250,840,280,600,960,450 If R.L.of first point is 000 m,then RL of last point is
73050. The types of surveying which requires least office work is
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