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You Are On Multi Choice Question Bank SET 1491

74551. Hysteresis curve is associated with motion of domain walls.



74552. The number of protons in germanium atom is





74553. Sulphur hexafluoride is used in





74554. The number of valence electrons in trivalent impurity is





74555. The v-i characteristic shown in the given figure is for





74556. The induced magnetic dipole moment has a direction opposite to the applied magnetic field.



74557. An atom of polarizability a is placed in a homogeneous electric field E. The energy stored in polarized atom is





74558. If B, H and M denote flux density, field intensity and magnetisation, B = μ0 (H + M).



74559. A capacitor can be represented by a capacitance and resistance in parallel. For a good capacitor, this parallel resistance should be





74560. Assertion (A): Ionic solids, in general, have no electrical conductivity.Reason (R): In ionic solids, electrons are tightly bound to the nucleus.





74561. The number of valence electrons in silicon atom is





74562. ∈r is determined by the atomic structure of the dielectric.



74563. A rare gas has N atoms per m3. If electronic polarizability of single atom of this gas is a e, then





74564. The colour code on a carbon resistor is brown-black-red-gold. The value of resistance is





74565. Tesla is a unit of





74566. If the operating temperature increases by 10°C, the rate of deterioration of solid dielectric becomes





74567. In which of the following semiconductor are holes minority carriers





74568. At 0 K, silicon and germanium behave like monoatomic crystals.



74569. Assertion (A): Acceptor extrinsic semiconductor has higher conductivity than intrinsic semiconductor.Reason (R): Addition of p-type impurity produces an allowable discrete energy level just above valence band.





74570. Soft iron is suitable for making temporary magnets.



74571. Antiferromagnetic materials do not have permanent dipoles.



74572. The Ohm's law for conduction in metals is





74573. The measurement of Hall coefficient of a semiconductor with one type of charge carriers gives the information about





74574. ∈0 has no other physical meaning than that of a fundamental conversion factor.



74575. When temperature is above ferromagnetic Curie temperature, a ferromagnetic material





74576. A magnet does not attract





74577. Bitter powder patterns prove the existence of domains.



74578. Assertion (A): An amorphous material is obtained when mobility of atoms is inhibited during solidification. Reason (R): Crystalline state is a natural state for most solids.





74579. An air cored inductance is a





74580. The number of turns in a coil is doubled. If initial time constant is T, the new time constant is




74581. When a trivalent impurity is added, the semiconductor becomes





74582. Iron has a body centred cubic structure.



74583. The units of polarization of dielectric are


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