72951. In a bipolar transistor, the emitter base junction has
72952. Which of these has semi-conductor metal junction?
72953. The ripple factor of power supply is a measure of
72954. Assertion (A): When light falls at junction of p-n photodiode, its p side becomes positive and n side becomes negative. Reason (R): When a photodiode is short circuited, the current in the external circuit flows from p side to n side.
72955. In what condition does BJT act like an open switch
72956. Manometer is used to measure
72957. A power supply has full-load voltage of 20 V. What will be its no load voltage when its voltage regulation is 100%
72958. For a photo conductor with equal electron and hole mobilities and perfect ohmic contacts at the ends, an increase in the intensities of optical illumination results in
72959. Holes act like
72960. Assertion (A): Silicon is less sensitive to changes in temperature than germanium. Reason (R): It is more difficult to produce minority carriers in silicon than in germanium.
72961. The number of protons in a silicon atom is
72962. The emitter follower is widely used in electronic instrument because
72963. 1 atmospheric pressure is equivalent to
72964. An amplifier with resistive -ve feedback has two left poles in its open loop transfer function. The amplifier
72965. Amplification of ultrasonic waves is possible in a piezoelectric semiconductor under applied electric field. The basic phenomenon involved is known as
72966. For a junction FET in the pinch off region, as the drain voltage is increased, the drain current
72967. For a BJT, under the saturation region.
72968. In which mode of BJT operation are both junctions reverse biased?
72969. Ferrities are particularly suited for high frequency applications because of their
72970. In intrinsic semiconductor, the fermi level
72971. Electromagnetic waves transport
72972. In a forward biased p-n junction current enters p material as hole current and leaves n material as electron current of the same magnitude.
72973. When P-N junction is in forward bias, by increasing the battery voltage
72974. A semiconductor in its purest form called
72975. Which of the following is an active device?
72976. Assertion (A): The forward dynamic resistance of p-n diode varies inversely with current. Reason (R): The forward dynamic resistance of p-n diode varies with the operating voltage.
72977. If E (i.e., available energy state) = EF(i.e., Fermi level), then probability that state E will be occupied is 0.5 for any temperature T.
72978. In LED the radiation is in
72979. The rate of change of excess carrier density is proportional to carrier density.
72980. Half turn stair change their direction through
72981. The main reason why Ni-Zn ferrites are used for audio and T.V. transformers is that
72982. Assertion (A): Intrinsic semiconductor is an insulator at 0 K. Reason (R): Fermi level in intrinsic semiconductor is in the centre of forbidden energy band.
72983. Typical values of h parameters at about 1 mA collector current for small signal audio amplifier in CE configuration are :
72984. A CMOS amplifier when compared to an N-channel. MOSFET, has the advantage of
72985. Dynamic resistance of diode is
72986. The presence of some holes in an intrinsic semiconductor at room temperature is due to
72987. Voltage series feedback (Also called series-shunt feedback) results in
72988. How many free electrons does a p type semiconductor has?
72989. Which of the following has highest resistivity?
72990. Assertion (A): In p-n-p transistor collector current is termed negative. Reason (R): In p-n-p transistor holes are majority carriers.
72991. The sensitivity of human eyes is maximum at
72992. In a bipolar transistor, the base collector junction has
72993. An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased
72994. What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliver 500 W of d.c. power to the load?
72995. In a semi-conductor diode, the barrier offers opposition to
72996. In a half wave rectifier, the load current flows
72997. For a NPN bipolar transistor, what is the main stream of current in the base region?
72998. Assertion (A): A VMOS can handle much larger current than other field effect transistors. Reason (R): In a VMOS the conducting channel is very narrow.
72999. In monolithic ICs, all the components are fabricated by
73000. Which one of the following is not a characteristic of a ferroelectric material?
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