72901. Assertion (A): When forward biased a p-n junction has low resistance. Reason (R): The ratio is called dynamic resistance.
72902. Assertion (A): JFET is a voltage controlled device. Reason (R): The drain current can be controlled by controlling VGS.
72903. For a P-N junction diode, the current in reverse bias may be
72904. Greatest mobility can be expected in case of
72905. An enhancement mode MOSFET is off when the gate voltage is
72906. When atoms are held together by the sharing of valence electrons
72907. Thermal runaway is not possible in FET, because as the temperature of FET increases.
72908. Which of the following pairs of semiconductors and current carriers is correctly matched?
72909. If E is energy level of electron and EF is Fermi level, then
72910. In the equation i = I0 (eV/ηVT - 1), VT =
72911. The range of life time carriers (electrons and holes) is
72912. In the forward blocking region of a silicon, controlled rectifier, the SCR is
72913. Which of the following is a passive component?
72914. From an n channel JFET for VDS constant and if VGS is made more negative, pinch off would occur at
72915. The diode and the moving coil milliammeter of figure are assumed to be ideal. The meter reading is
72916. Which of these is an angle measuring instrument?
72917. The V-I characteristic of a semi-conductor diode is shown in figure. From this figure it can be concluded that
72918. The process of deliberately adding impurity to a semi-conductor material is called
72919. The electron and hole concentration in a intrinsic semiconductor are ni and Pi respectively when doped with a P type material, these change to n and P, respectively. Then
72920. The energy to cause thermionic emission is supplied by heating the cathode.
72921. Assertion (A): In an n-p-n transistor as the electrons enter the collector region, they are accelerated towards the collector terminal. Reason (R): Emitter base junction in BJT is forward biased.
72922. Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value. Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.
72923. The mass of an electron is nearly
72924. Assertion (A): In a Schottky diode the reverse recovery time is almost zero. Reason (R): A Schottky diode has aluminium silicon junction.
72925. The drain characteristics of JFET are drawn between
72926. Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?
72927. Electrical contact materials used in switches, brushes and relays must possess
72928. A JFET behaves as a constant current source when
72929. The effect of a finite gain of operational amplifier used in an integrator is that
72930. The ripple factor from a capacitor filter __________ as the load resistance __________ .
72931. Of the various capacitances associated with a junction transistor the gain bandwidth product is affected to maximum extend by
72932. Choose proper substitutes for x and y to make the following statement correct.Tunnel diode, Avalanche photodiode are operated in x bias and y bias respectively.
72933. Assertion (A): When a zener diode breakdown, occurs the voltage across it is constant. Reason (R): The upper limit of zener current is determined by power handling capacity.
72934. Consider the following statements An iron cored choke is a nonlinear device.A carbon resistor kept in a sunlight is a time - invariant and passive device.A dry cell is a time - varying and active device.An air capacitor is a time - invariant and passive device Of these statements
72935. If 10 V is the peak voltage across the secondary of the transformer in a half wave rectifier (without any filter circuit), then the maximum voltage on the reverse biased diode will be
72936. In energy band diagram of p type semiconductor the acceptor energy level is
72937. Given a power supply filter circuit, what measurements must be made of determine percentage regulation
72938. When the gate terminal of MOSFET is positive, it is said to operate in
72939. The product kT (where k is Boltzmann's constant and T is absolute temperature) at room temperature is about
72940. If E is energy level of electron and EF is fermi level, and T = 0 and E > EF, then
72941. Which variety of copper has the best conductivity?
72942. The number of valence electrons in a silicon atom is
72943. In a JFET VDS exceeds the rated value. Then it operates in
72944. Which type of line is particular to section drawing?
72945. The output, V-I characteristics of an Enhancement type MOSFET has
72946. Piezoelectric quartz crystal resonators find application where
72947. The forbidden energy gap between the valence band and conduction band will be least in case of
72948. If too large current passes through the diode
72949. Figure shows the terminals of a transistor in plastic package TO 18. Then
72950. The network shown in the figure represents a
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