72801. The modulation of effective base width by collector voltage is known as Early effect, hence reverse collector voltage
72802. Assertion (A): In intrinsic semiconductors, the charge concentration increases with temperature. Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is lower.
72803. Covalent bond energy in Germanium is approximately
72804. Which is correct for a vacuum triode?
72805. The type of bond provided in brick masonry for carrying heavy loads is
72806. Secondary emission results
72807. Ohmic range of carbon composition resistors is
72808. The depletion layer consists of immobile ions.
72809. The output V-I characteristics of an Enhancement type MOSFET has
72810. A sample of N-type semiconductor has electron density of 6.25 x 1018/cm3 at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature the hole density works out to be
72811. Mobility is directly proportional to Hall coefficient.
72812. n channel FETs are better as compared to p-channel FET because
72813. An n channel depletion type MOSFET has
72814. In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at
72815. The density of states (i.e. number of states per eV per m3) in the conduction band for energy level E is proportional to
72816. A-P type material has an acceptor ion concentration of 1 x 1016 per cm3. Its intrinsic carrier concentration is 1.48 x 1010/ cm. The hole and electron mobilities are 0.05m2/V-sec and 0.13 m2/V-sec respectively calculate the resistivity of the material
72817. Resistivity is a property of a semiconductor that depends on
72818. Operating point signifies that
72819. The triangular space formed between extra dos and horizontal line drawn through the crown of arch is called
72820. Assertion (A): In n-p-n transistor conduction is mainly due to electrons. Reason (R): In n type materials electrons are majority carriers.
72821. The factor n in the equation for calculating current for a silicon diode is
72822. An LED is
72823. An enhancement mode MOSFET is on when the gate voltage is
72824. For the n-type semiconductor with n = NP and P = , the hole concentration will fall below the intrinsic value because some of the holes
72825. For a junction FET in the pinch off region as the drain voltage is increased, the drain current
72826. To avoid thermal runaway in the design of an analog circuit, the operating point of the BJT should be such that it satisfies the condition.
72827. For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when
72828. The primary function of a clamper circuit is to
72829. Breakdown in dielectric may be
72830. AE 139 is a
72831. The function off an oxide layer in an IC device is to mask against diffusion or ion implantationinsulate the surface electricallyincrease the melting point of Siproduce a chemically stable protective layer
72832. The passage of current in an electrolyte is due to the movement of
72833. In a CE bipolar transistor operating in active region, collector current is independent of
72834. When a normal atom loses an electron
72835. The main purpose of using transformer coupling in a class A amplifier is to make it more
72836. The effective channel length of a MOSFET in saturation decreases with increase in
72837. Which of the following element does not have three valence electrons?
72838. Which of the following is used in the sterilization of water?
72839. Electrons within a metal have energy levels from zero to Fermi level EF.
72840. A Darlington emitter follower circuit is some times used in the output stage of a TTL gate in order to
72841. Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band. Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons.
72842. The drift velocity of electrons and holes is proportional to electric field strength.
72843. In an n channel MOSFET, the substrate is connected
72844. Piezoelectric materials serves as a source of
72845. Which of the following is not a semiconductor?
72846. At absolute temperature
72847. If E is electric field intensity, the current density due to field emission is proportional to
72848. When a high voltage reference is required it is advantageous to use two or more zener diodes in series to allow
72849. Assertion (A): When p-n junction is forward biased, steady current flows. Reason (R): When a p-n junction is forward biased, free electrons cross the junction from n to p and holes from p to n.
72850. Pentavalent impurity creates n type semiconductor.
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